We propose a vector-pipeline processor VP-DSP for low-rate videophones which can encode and decode 10 frames/sec. of QCIF through a 29.2 kbps low-rate line. We have already fabricated a VP-DSP LSI by a 0.35 µm CMOS process. The area of the VP-DSP core is 4.26 mm2. It works properly at 25 MHz/1.6 V with a power consumption of 49 mW. Its peak performance is up to 400 MOPS, 8.2 GOPS/W.

This paper proposes an instruction-level power estimation method for an embedded RISC processor, the power consumption of which fluctuates so much by applications and input data. The proposed method estimates the power consumption from the result of ISS (Instruction Set Simulator) and energy tables according to Hamming Distance of Registers (HDR) of all instructions. It is over 105 times faster than the gate-level detailed logic simulation, while the estimated power curves have the same tendency with those from the logic simulation. The proposed method realizes both accurate and fast power estimation of embedded processors.

We analyze the correlation between BTI (Bias Temperature Instability) -induced degradations and process variations. Those reliability issues are correlated. BTI is one of the most significant aging-degradations on LSIs. Threshold voltages of MOSFETs increase with time when biases stress their gates. It shows a strong effect of BTI on highly scaled LSIs in the same way as the process variations. The accurate prediction of the combinational effects is indispensable. We should analyze both aging-degradations and process variations of MOSFETs to explain the correlation. We measure frequencies of ROs (Ring Oscillators) of 65-nm process test circuits on two types of LSIs, ASICs and FPGAs. There are 98 and 837 ROs on our ASICs and FPGAs respectively. The frequencies of ROs follow gaussian distributions. We describe the highest frequency group as the “fast” conditon, the average group as the “typical” conditon and the lowest group as the “slow” conditon. We measure the aging-degradations of the ROs of the three conditions on the accelerated test. The degradations can be approximated by logarithmic function of stress time. The degradation at the “fast” condition has a higher impact on the frequency than the “slow” one. The correlation coefficient is 0.338. In this case, we can define a smaller design margin for BTI-induced degradations than that without considering the correlation because the degradation at the “slow” conditon is smaller than the average and the fast.

We propose a radiation-hardened Flip-Flop (FF) with stacked transistors based on the Adaptive Coupling Flip-Flop (ACFF) with low power consumption in a 65 nm FDSOI process. The slave latch in ACFF is much weaker against soft errors than the master latch. We design several FFs with stacked transistors in the master or slave latches to mitigate soft errors. We investigate radiation hardness of the proposed FFs by α particle and neutron irradiation tests. The proposed FFs have higher radiation hardness than a conventional DFF and ACFF. Neutron irradiation and α particle tests revealed no error in the proposed AC Slave-Stacked FF (AC_SS FF) which has stacked transistors only in the slave latch. We also investigate radiation hardness of the proposed FFs by heavy ion irradiation. The proposed FFs maintain higher radiation hardness up to 40 MeV-cm2/mg than the conventional DFF. Stacked inverters become more sensitive to soft errors by increasing tilt angles. AC_SS FF achieves higher radiation hardness than ACFF with the performance equivalent to that of ACFF.

We have fabricated a LUT-based FPGA device with functionalities measuring within-die variations in a 90 nm process. Variations are measured using ring oscillators implemented as a configuration of the FPGA. Random variations are dominant in a 4848 configurable array laid out in a 3 mm3 mm square region. It has a functionality to measure delays on actual signal paths between flip flops by providing two clock pulses. Measured variations are used to maximize the operating frequency of each device by choosing the optimal paths. Optimizations of routing paths using a simple model circuit reveals that performance of the circuit is enhanced by 2.88% in average and a maximum of 9.34%.

This paper describes a comprehensive simulation and test environment for prototype LSI verification. We develop a Perl package, ST, for simulation & test of digital circuits. A designer can describe a testbench with the Perl syntax, which can be converted to various kinds of simulators and LSI testers. Parameters such as a target simulator/tester, cycle time and voltage levels can be changed very easily just modifying arguments of subroutines. We also develop DUT boards which consist of a tester-dependent mother board and a package-dependent daughter board. Using ST and the DUT boards, a designer can start verification just after getting fabricated LSIs.

A 32bit CPU, which can operate more than 15 years with 220mAH Li battery, or eternally operate with an energy harvester of in-door light is presented. The CPU was fabricated by using 65nm SOTB CMOS technology (Silicon on Thin Buried oxide) where gate length is 60nm and BOX layer thickness is 10nm. The threshold voltage was designed to be as low as 0.19V so that the CPU operates at over threshold region, even at lower supply voltages down to 0.22V. Large reverse body bias up to -2.5V can be applied to bodies of SOTB devices without increasing gate induced drain leak current to reduce the sleep current of the CPU. It operated at 14MHz and 0.35V with the lowest energy of 13.4 pJ/cycle. The sleep current of 0.14µA at 0.35V with the body bias voltage of -2.5V was obtained. These characteristics are suitable for such new applications as energy harvesting sensor network systems, and long lasting wearable computers.

In this paper, we present an analysis of local variability of bias temperature instability (BTI) by measuring Ring-Oscillators (RO) on various processes and its impact on logic circuit and SRAM. The evaluation results based on measuring ROs of a test elementary group (TEG) fabricated in 7nm Fin Field Effect Transistor (FinFET) process, 16/14nm generation FinFET processes and a 28nm planer process show that the standard deviations of Negative BTI (NBTI) Vth degradation (σ(ΔVthp)) are proportional to the square root of the mean value (µ(ΔVthp)) at any stress time, Vth flavors and various recovery conditions. While the amount of local BTI variation depends on the gate length, width and number of fins, the amount of local BTI variation at the 7nm FinFET process is slightly larger than other processes. Based on these measurement results, we present an analysis result of its impact on logic circuit considering measured Vth dependency on global NBTI in the 7nm FinFET process. We also analyse its impact on SRAM minimum operation voltage (Vmin) of static noise margin (SNM) based on sensitivity analysis and shows non-negligible Vmin degradation caused by local NBTI.